RFN6T2DNZC9
Rohm Semiconductor
Deutsch
Artikelnummer: | RFN6T2DNZC9 |
---|---|
Hersteller / Marke: | LAPIS Technology |
Teil der Beschreibung.: | SUPER FAST RECOVERY DIODE : RFN6 |
Datenblätte: | None |
RoHs Status: | |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Anzahl | Einzelpreis |
---|---|
1+ | $1.69 |
10+ | $1.518 |
100+ | $1.2198 |
500+ | $1.0022 |
1000+ | $0.834 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
---|---|
Spannung - Forward (Vf) (Max) @ If | 980 mV @ 3 A |
Spannung - Sperr (Vr) (max) | 200 V |
Technologie | Standard |
Supplier Device-Gehäuse | TO-220FN |
Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
Serie | - |
Rückwärts-Erholzeit (Trr) | 25 ns |
Verpackung / Gehäuse | TO-220-3 Full Pack |
Produkteigenschaften | Eigenschaften |
---|---|
Paket | Tube |
Betriebstemperatur - Anschluss | 150°C |
Befestigungsart | Through Hole |
Diodenkonfiguration | 1 Pair Common Cathode |
Strom - Sperrleckstrom @ Vr | 10 µA @ 200 V |
Strom - Richt (Io) (pro Diode) | 6A |
Grundproduktnummer | RFN6 |
CONN N J FLNG MNT 4HOLE
CONN N J FLNG MNT 4HOLE
CONN N J FLNG MNT 4HOLE
DIODE GEN PURP 800V 5A TO220NFM
CONN N J FLNG MNT 4HOLE
CONN N J FLNG MNT 4HOLE
CONN N J FLNG MNT 4HOLE
DIODE GEN PURP 600V 5A TO220NFM
DIODE GEN PURP 800V 5A TO220NFM
DIODE GEN PURP 600V 5A TO252
CONN N J FLNG MNT 4HOLE
CONN N J FLNG MNT 4HOLE
DIODE GEN PURPOSE TO252
CONN N J FLNG MNT 4HOLE
CONN N J FLNG MNT 4HOLE
DIODE ARRAY GP 200V 3A TO252
DIODE GEN PURP 600V 5A TO220NFM
SUPER FAST RECOVERY DIODE. RFN6B
SUPER FAST RECOVERY DIODE (AEC-Q
DIODE GEN PURP 600V 5A TO252
2024/06/6
2024/04/18
2024/04/13
2023/12/20
![]() RFN6T2DNZC9Rohm Semiconductor |
Anzahl*
|
Zielpreis (USD)
|